PART |
Description |
Maker |
KM616U4000B |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EM611FP16E-55LF EM611FU16E-55LF EM611FU8E-55LF EM6 |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
http:// Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
EM640FU16E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
KM68U2000A |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM) 256Kx8位低功耗和低电压的CMOS静态RAM56K × 8位低功耗和低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
IC62LV2568L-70TI IC62LV2568L IC62LV2568L-100B IC62 |
256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM 256K × 8低功耗和低成本吓的CMOS静态RAM
|
Lattice Semiconductor, Corp. ICSI[Integrated Circuit Solution Inc]
|
IS62LV25616LL |
256K x 16 Low Voltage, Ultra Low Power CMOS SRAM(256K x 16 低压,极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http:// MOSEL[Mosel Vitelic, Corp] Mosel Vitelic, Corp.
|